EFFECT OF STRONG MAGNETIC-FIELDS ON CURRENT-VOLTAGE CHARACTERISTICS OF INAS GASB/INAS TUNNELING DEVICES/

Authors
TAKAMASU T MIURA N TAIRA K FUNATO K KAWAI H
Citation
T. Takamasu et al., EFFECT OF STRONG MAGNETIC-FIELDS ON CURRENT-VOLTAGE CHARACTERISTICS OF INAS GASB/INAS TUNNELING DEVICES/, Physica. B, Condensed matter, 201, 1994, pp. 380-383
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
201
Year of publication
1994
Pages
380 - 383
Database
ISI
SICI code
0921-4526(1994)201:<380:EOSMOC>2.0.ZU;2-A
Abstract
Measurements of current-voltage characteristics of GaSb/InAs heterostr ucture devices were performed under pulsed high magnetic fields up to 40 T. The critical voltage for the negative differential conductivity was found to change under strong magnetic fields applied parallel to t he interface. The dependence of critical voltage on the magnetic field was investigated in terms of self-consistently calculated Landau leve ls.