[110] tunneling under applied magnetic fields into Y1Ba2Cu3O7-delta: Possible evidence for a field-induced id(xy) gap component

Tunneling characteristics along the [110] direction were measured in Y1Ba2C u3O7-delta\Insulator\In junctions as a function of the magnetic field H, ap plied parallel to the plane of the junction, along the c-axis. The junction s exhibit a Zero Bias Conductance Peak (ZBCP) which splits as H-1/2. The da ta is in better agreement with a field-induced id(xy) gap component than wi th a Doppler-shift-induced field splitting.