Authors
Citation
Jf. Scott, Ferroelectric memories today, FERROELECTR, 236(1-4), 2000, pp. 247-258
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193
→ ACNP
Volume
236
Issue
1-4
Year of publication
2000
Pages
247 - 258
Database
ISI
SICI code
0015-0193(2000)236:1-4<247:FMT>2.0.ZU;2-6
Abstract
An up-date is given on the use of ferroelectric (FE) thin films in memory d
evices, both as passive capacitors in dynamic random access memories (DRAMs
) and as the memory itself in nonvolatile switching devices (both destructi
ve-read-out NV-FRAMs and nondestructive-read-out ferroelectric-gated FETs -
- field effect transistors).