Sl. Bravina et al., Non-stationary and relaxation processes and induced microscale polar regions in incommensurate phase of ferroelectric semiconductor Sn2P2Se6, FERROELECTR, 235(1-4), 1999, pp. 275-285
For the ferroelectric (FE) semiconductor Sn2P2Se6 which has the incommensur
ate phase (ICP) the study of temperature and time behaviour of pyroelectric
, ferroelectric and dielectric parameters, current-to-voltage and transient
current characteristics, non-stationary and memory effects was performed.
Longterm low-frequency (10 Hz - 1 kHz) electric oscillations appear in a de
ep ICP and acquire the relaxation character in the vicinity of ICP-FEP tran
sition. No less than three main frequencies in the oscillation spectrum are
observed. Transition to the stochastic regime and subsequent transition to
the space-time organization processes are discussed. Theoretical considera
tion based on the suggestion that the evolution of the local states of the
system represents a self-organizing process is performed. The main peculiar
ity of ICP-FEP transition is the coexistence of incommensurate and fine-dom
ain structures with initial zero degree of unipolarity, The main peculiarit
y of FEP-ICP transition after being in a deep FEP is the existence of mixed
polar-incommensurate state in the ICP.