An application of polarized domains in ferroelectric thin films using scanning probe microscope

The feasibility of utilizing PZT films as future data storage media was inv estigated using a modified AFM. Applying voltages between a conductive AFM tip and the PZT films causes the switching of ferroelectric domains. The do mains are observed using an EFM imaging technique. The experimental results and calculations revealed that the electrostatic force generated between t he polarized area and the tip is a main contributor for the imaging of the polarized domains. The written features on ferroelectric films were less th an 100 nm in diameter, implying the possibility of realizing data storage d evices with ultra-high area density. The disappearance of the polarized ima ges without any applied voltage was observed, which is a drawback in this a pplication of PZT thin films.