A study of vacancy-related defects in (Pb,La)(Zr,Ti)O-3 thin films using positron annihilation

Authors
Friessnegg, T Aggarwal, S Nielsen, B Ramesh, R Keeble, DJ Poindexter, EH
Citation
T. Friessnegg et al., A study of vacancy-related defects in (Pb,La)(Zr,Ti)O-3 thin films using positron annihilation, IEEE ULTRAS, 47(4), 2000, pp. 916-920
Citations number
16
Categorie Soggetti
Optics & Acoustics
Journal title
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
ISSN journal
08853010 → ACNP
Volume
47
Issue
4
Year of publication
2000
Pages
916 - 920
Database
ISI
SICI code
0885-3010(200007)47:4<916:ASOVDI>2.0.ZU;2-Y
Abstract
The formation of vacancy-type defects in La-doped lead zirconate titanate ( PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum dopin g and after cooling in an oxygen-reduced ambient. The changes in the Dopple r-broadening S parameter are consistent with the progressive introduction o f Ph-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10(-5) Torr oxygen p artial pressure after growth exhibits an increase in the density of vacancy -type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes.