High-temperature stability of low-oxygen silicon carbide fiber heat-treated under different atmosphere

Citation
T. Shimoo et al., High-temperature stability of low-oxygen silicon carbide fiber heat-treated under different atmosphere, J MATER SCI, 35(15), 2000, pp. 3733-3739
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
35
Issue
15
Year of publication
2000
Pages
3733 - 3739
Database
ISI
SICI code
0022-2461(200008)35:15<3733:HSOLSC>2.0.ZU;2-N
Abstract
The effects of heat-treating atmosphere on the thermal stability of low-oxy gen silicon carbide fiber were investigated. Heat-treatment of EB-cured PCS fiber were conducted at 1573 K in argon, nitrogen or vacuum of 10(-6) atm. Subsequently the fibers were exposed to 1873 K in argon. The strength of f ibers were strongly influenced by the heat-treating atmosphere. When heat-t reated in nitrogen, the fibers absorbed nitrogen. High-temperature exposure caused severe degradation of strength owing to the decomposition of silico n oxycarbonitride phase. When heat-treated in vacuum, the fiber surface was smooth and pore-free, minimizing the degradation of strength at high tempe rature. (C) 2000 Kluwer Academic Publishers.