The photoelectrochemical properties of poly(3,4-ethylene dioxythiophene)/po
ly(styrene sulfonate) in contact with an electrolytic solution containing a
redox couple were studied using the theories for the semiconductor-electro
lyte interface. When this polymer-electrolyte interface is illuminated with
h nu > Eg (gap energy) it exhibits cathodic photocurrent typical of p-type
semiconductors, and the flat band potential, density of majority carriers,
and the depletion layer thickness can be determined. To complete the band
energy diagram of this polymer-electrolyte interface we obtained the band g
ap energy through the absorption and photocurrent spectra. The relatively l
ow band gap energy (1.5 eV) and the photoeffects observed at the interface
suggest its use as the absorbing material in photoelectrochemical cells.