Investigation of damage behaviour and isolation effect of n-type 6H-SiC byimplantation of oxygen

Silicon carbide is an important wide-band-gap semiconductor for high temper ature, high-voltage, high-power and high-frequency devices. Electrical isol ation is an important aspect for device applications. In this report, oxyge n ions, 70 keV with doses ranging from 5 x 10(13) to 5 x 10(15) cm(-2), hav e been implanted into n-type 6H-SiC to investigate the possibility of formi ng a high-resistive layer. The damage behaviour and internal stress were ch ecked by Rutherford backscattering spectroscopy and channelling, and an x-r ay rocking curve, respectively. Atomic force microscope observations reveal ed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14) cm(-2) After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is over the critical value. Schottky structures of Au/SiC have been fabric ated on the annealed samples and I-V curves of metal/SiC/InGeNi were measur ed at room temperature at both forward and reverse bias; the electrical iso lation effect was observed at proper implantation dosages. The results indi cated that there exists a dose window for electrical isolation.