Structural properties of sputtered amorphous Ga1-xPx films

a-Ga1-xPx (0.5 less than or equal to x less than or equal to 1) films have been prepared by r.f. sputtering. The local structure and bonding configura tions in these films have been investigated by extended x-ray absorption fi ne structure (EXAFS) and infrared (IR) spectroscopy measurements. The resul ts show that the network of the films is chemically ordered over the compos ition range studied. They also show that excess P atoms are incorporated wi th fourfold coordination into the network for x < 0.8. This indicates subst itutional alloying, which in turn suggests the dopability of the material.