Behavior of MgFe2O4 films on MgO in an electric field

Citation
Mt. Johnson et al., Behavior of MgFe2O4 films on MgO in an electric field, J AM CERAM, 83(7), 2000, pp. 1768-1772
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
83
Issue
7
Year of publication
2000
Pages
1768 - 1772
Database
ISI
SICI code
0002-7820(200007)83:7<1768:BOMFOM>2.0.ZU;2-Y
Abstract
Thin films of MgFe2O4 spinel on a (001) substrate of MgO have been heated t o elevated temperatures in an applied electric field. The externally applie d electric field produces a large driving force that influences the kinetic behavior of the spinel film and results in the formation of an MgO layer a t the cathode due to the higher mobility of the Mg2+ cations in the spinel. Through the use of both scanning and transmission electron microscopy, the evolution of this layer was followed through a series of heat treatments. Analysis of the decomposition process shows that initially isolated pockets of MgO form at the cathode surface. These pockets grow and eventually coal esce to form a continuous MgO layer. The two MgO/spinel heterojunctions beh ave differently since one is morphologically stable while the other is morp hologically unstable. TEM analysis showed that during the decomposition pro cess, dislocation loops are formed in the vicinity of the MgO pockets. It i s proposed that these dislocation loops form to accommodate the lattice mis fit at the interface between the precipitating MgO and spinel.