Analysis of direct current potential field around multiple spherical defects

A method for evaluating the distribution of electrical potential around mul tiple spherical defects was proposed. As the method is based on the known f ormulated solution for a single defect, the electric field could be analyze d efficiently in comparison with the other methods, such as the finite elem ent method. The electric field in a conductive material with multiple spher ical defects at random locations was analyzed by the method. Result of the analysis showed that the increase in the potential difference normalized by the potential difference without defects, Delta V/V-0, was in proportion t o the product of the volumetric density of defects and the mean of cubed de fect radius, n[r(3)](m). This universal relationship held independently of the value of n(v) and the distribution of defect radius. Using the relation ship, the damage due to the multiple defects can be evaluated from the incr ease in potential difference.