Effect of argon ion irradiation on Sb2Te3 films in a dense plasma focus device

Authors
Rawat, RS Arun, P Vedeshwar, AG Lam, YL Liu, MH Lee, P Lee, S Huan, ACH
Citation
Rs. Rawat et al., Effect of argon ion irradiation on Sb2Te3 films in a dense plasma focus device, MATER RES B, 35(3), 2000, pp. 477-486
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
35
Issue
3
Year of publication
2000
Pages
477 - 486
Database
ISI
SICI code
0025-5408(200002)35:3<477:EOAIIO>2.0.ZU;2-K
Abstract
The effect of argon ion irradiation on vacuum-evaporated as-grown Sb2Te3 fi lms in a dense plasma focused device (DPF) was studied by structural, compo sitional, and morphological analyses. The as-grown films consisted of both stoichiometric and nonstoichiometric Sb2Te3 phases with traces of Te. Ion e nergy greater than 1 MeV promoted the formation of nonstoichiometric SbxTe1 -x phase and the oxidation of Sb. Ion energy less than 1 MeV promoted the f ormation of single stoichiometric Sb2Te3 phase and a homogeneous distributi on of grain size with preferred orientation. (C) 2000 Elsevier Science Ltd. All rights reserved.