Influences of H ion implantation on Ti : O,H,D films prepared by rf sputtering

A 30 keV H ion implantation on Ti:O,H,D films which were composed of titani um oxide, hydride and deuteride phase was carried out, and the changes in t he microstructure and H concentration were examined by X-ray diffraction (X RD) measurements, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analysis. It was foun d that the crystallinity of the delta-phase Ti:H,D was decreased and gamma- phase Ti:H,D was observed after H ion implantation. The surface morphology was also changed and the surface roughness was reduced after implantation. The distribution of I-I atoms was spread out toward the substrate as H ion dose was increased. The total amount of H estimated from ERD spectra was sl ightly increased, but the D concentration was decreased after H ion implant ation. (C) 2000 Elsevier Science B.V. All rights reserved.