The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (001)Si under high current stress

Authors
Lin, HH Cheng, SL Chen, LJ
Citation
Hh. Lin et al., The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (001)Si under high current stress, NUCL INST B, 169, 2000, pp. 161-165
Citations number
17
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
169
Year of publication
2000
Pages
161 - 165
Database
ISI
SICI code
0168-583X(200006)169:<161:TFMAPF>2.0.ZU;2-Q
Abstract
Ultrafast diffusion of Ni and Cu atoms in p(+)-Si channel was observed. Con tact failed at negative contact first, possibly by electron-hole recombinat ion at the negative electrode. Ti diffusion assisted by Cu under high curre nt density was observed in the Cu and Ti multilayered samples. Ti atoms at Ti contact cannot migrate into the diffusion channel but can be carried by Cu atoms. In addition, Cu and Ti easily interdiffused under high current de nsity. (C) 2000 Published by Elsevier Science B.V. All rights reserved.