Silicon wafers were implanted with 20 keV O-2(+) up to total fluence of 1 x
10(18) O-2(+) cm(-2) to synthesize SiO2 layers. The FTIR, ESR and C-V stud
ies of as-implanted samples and samples nitrogen-annealed at 500 degrees C
and 800 degrees C are reported. The FTIR spectrum of the as-implanted sampl
e shows absorption bands corresponding to the stretching (1050 cm-L strong)
, the bending (800 cm(-1), weak) and the rocking (415 cm(-1), weak) modes o
f SiO2, The peaks shift towards higher wave number on annealing. The ESR si
gnal of the as-implanted sample exhibits an isotropic g-value 2.0028, the l
ine width 3.75 G and the spin density 1.1 x 10(16) cm-2 which disappears on
annealing at 800 degrees C. The interface state density distribution as a
U-shape and a minimum value of similar to 7-8 x 10(11) cm(-2) eV(-1). (C) 2
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