Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides

Authors
Citation
C. Gorecki, Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides, OPT LASER E, 33(1), 2000, pp. 15-20
Citations number
13
Categorie Soggetti
Optics & Acoustics
Journal title
OPTICS AND LASERS IN ENGINEERING
ISSN journal
01438166 → ACNP
Volume
33
Issue
1
Year of publication
2000
Pages
15 - 20
Database
ISI
SICI code
0143-8166(200001)33:1<15:OOPSOF>2.0.ZU;2-4
Abstract
In view of applications of SiOxNy thin films in MOEMS technology, a study o f the optomechanical characteristics of the PECVD deposited material are in vestigated. To optimize the quality of SiOxNy layers we establish the relat ionship between the chemical properties, optical performances, micromechani cal stress, and growth parameters of deposited films. To use the SiOxNy thi n film for the core layer of a strip-loaded waveguide, we propose preparati on conditions of SiOxNy that offer a low-loss optical waveguide with well-c ontrolled refractive index, based on a low-internal stress multilayer struc ture. (C) 2000 Elsevier Science Ltd. All rights reserved.