Temperature dependence of magnetoresistance and Hall effect for Ho doped n-type InSe

Magnetoresistance and Hall effect measurements were carried out for Ho dope d n-InSe (n-InSe:Ho) sample in the temperature range 10-340 K, in which the sample exhibits transverse magnetoresistance (M-J perpendicular to B) and longitudinal magnetoresistance (M-J//B) effect. The fit to a temperature po wer law T-beta gives M-J perpendicular to B alpha(T-1.07) and M-J//B alpha( T-1.11) in the range 10-340 K for n-InSe:Ho. The transverse magnetoresistan ce coefficient of InSe:Ho in the temperature range 10-340 K is much greater than that of the reference n-InSe sample. As the temperature increases, th e carrier concentration in the n-InSe:Ho sample increases between 10-340 K. Impurity energy levels calculated from ln(p/T-3/2) vs 10(3) /T plot for n- InSe:Ho in the range 10-40 K, 40-240 K and 260-340 K are E-c-69 meV, E-c-26 4 meV and E-c-568 meV, respectively. The electron Hall mobility of the n-In Se:Ho sample decreases, as mu(H) alpha T-2.35 for 140-340 K. The Hall mobil ity and the carrier concentration of the n-InSe:Ho sample increase with inc reasing temperature in the range 10-340 K.