Hole-filling above T-c, at the origin of the in-plane resistivity anomaly in Bi-2212 crystals

Citation
C. Boulesteix et al., Hole-filling above T-c, at the origin of the in-plane resistivity anomaly in Bi-2212 crystals, PHYS ST S-A, 179(2), 2000, pp. 403-406
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
179
Issue
2
Year of publication
2000
Pages
403 - 406
Database
ISI
SICI code
0031-8965(20000616)179:2<403:HATATO>2.0.ZU;2-T
Abstract
We have observed a sharp peak (100%) in the in-plane resistivity rho(ab) ju st above T-c, in Bi-2212 crystals, in agreement with previous results from Han et al. who attributed this anomaly to the "quasi-reentrant behaviour" a lready observed for polycrystalline samples. This explanation is very likel y unadapted to these crystals and we propose another one related to a model we had used to fit rho(c)(T) curves for Bi-2212 underdoped crystals, namel y, an increase of the Fermi level (hole-filling) with decreasing temperatur e, above T-c, probably due to a change in the Bi-O or Cu-O bonds. A previou sly reported c-axis lattice anomaly, occurring in the same temperature rang e, is most probably related to this bonding alteration.