An investigation of I-V characteristics of Au/n-GaAs Schottky diodes afterhydrostatic pressure

The experimental results have shown that the I-V characteristics of the dio de shift to lower current values due to an increase of the Schottky barrier height with increasing hydrostatic pressure and the quality of the diode i mproves. It has been seen that the I-V characteristics after removal of the hydrostatic pressure have coincided with that at 1 kbar. Furthermore, the time-dependence of I-V characteristics of the Au/n-GaAs Schottky diodes 15, 30 and 45 days after the pressure has been removed have also coincided wit h that at 1 kbar. After the pressure treatments, this behavior of our diode s has been ascribed to the removal of fabrication-induced lateral inhomogen eities of the barrier height.