Temperature variation of electrical conductivity in two crystallographic di
rections (sigma(parallel to) and sigma(perpendicular to)) of p-Bi2Te3 cryst
als has been measured. The anisotropic factor, sigma(parallel to)/sigma(per
pendicular to), shows an exponential form involving an activation energy. T
his can be interpreted as an effect of defects between the layers on the el
ectronic density of states.