Atomic layer growth on Al(111) by ion bombardment

Citation
C. Busse et al., Atomic layer growth on Al(111) by ion bombardment, PHYS REV L, 85(2), 2000, pp. 326-329
Citations number
23
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
2
Year of publication
2000
Pages
326 - 329
Database
ISI
SICI code
0031-9007(20000710)85:2<326:ALGOAB>2.0.ZU;2-A
Abstract
Instead of the expected erosion morphology composed of craters, rare gas io n bombardment of the, Al(111) surface is found to cause initial surface gro wth of several atomic layers. This phenomenon is observed for Ne+, Ar+. and Xe+ at all temperatures at which bombardment induces morphological surface changes and for ion energies down to a few hundred eV. Thr effect is inter preted on the basis of a thermal spike induced separation of damage into su bsurface vacancy clusters and surface allatum clusters.