Redistribution of boron in silicon after Ne+ postirradiation and thermal annealing

Silicon wafers were implanted with 200 keV B+ ions up to 5 x 10(14) cm(-2) fluence, then postirradiated with 75-650 keV Ne+ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500 degrees C. The change in the boron depth distribution at each step is reco rded by means of neutron depth profiling, and compared with theoretical sim ulations. It turns out that the postirradiation releases the majority of all boron at oms from their initial implantation sites already at ambient temperature an d quite low fluence, whereas subsequent thermal annealing is of minor impor tance. The diffusion coefficient of the boron radiation enhanced mobility i s found to decrease steadily with increasing postirradiation fluence. These new data are compared with other results from literature.