Dynamics of light-induced NIR-absorption of Nb4+ polarons in SBN : Cr crystals at low temperature

Authors
Gao, M Vikhnin, V Kapphan, S
Citation
M. Gao et al., Dynamics of light-induced NIR-absorption of Nb4+ polarons in SBN : Cr crystals at low temperature, RADIAT EFF, 151(1-4), 1999, pp. 51-55
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
151
Issue
1-4
Year of publication
1999
Pages
51 - 55
Database
ISI
SICI code
1042-0150(1999)151:1-4<51:DOLNON>2.0.ZU;2-V
Abstract
The dynamics of light-induced (Kr+, Ar+-laser) electronic polarons (Nb4+ ce nters with broad absorption band around 0.8 eV) and light-induced centers o f other types were investigated in SrxBa1-xNb2O6:Cr (SBN:Cr) and in SBN:Ce using FTIR absorption measurements at low temperature. A theoretical model involving Cr3+/Ca4+, Ce3+/Ce4+ Nb4+ electronic polarons and trapping X-cent ers is proposed. The trapping of polarons at Cr4+/Ce4+ centers with subsequ ent recharging is shown to play an important role in the polaron dynamics. The predictions of the model are in very good agreement with the experiment al results.