A Rutherford backscattering spectrometry study of Zn implanted BeO single crystals

A single crystal of BeO was implanted with 10(15) cm(-2) of 70 keV Zn+ at r oom temperature and then annealed in air for 2 h at 500 degrees C and then for 2 h at 1000 degrees C. Rutherford backscattering/channelling technique (RBS/C) was used to study lattice location of Zn atoms. As-implanted Zn too k two regular positions: the first site was on the string [0001], probably substituting Be, the second was an interstitial, near the string. After ann ealing at 500 degrees C a fraction of the implanted zinc atoms remained on the string. The second site moved into the centre of the channel. This posi tion can be the octahedral void. Annealing at 1000 degrees C increases the fraction of Zn in the octahedral voids.