Gamma-ray and 1.5-MeV electron irradiations are employed in the temperature
range 25-175 degrees C to produce radiation effects in undoped paratelluri
te (alpha-TeO2) single crystals. Optical absorption and ESR techniques are
used to study the growth and annealing of point defects, and spectroscopic
observations by these two methods are compared. Pulse-annealing experiments
are reported over the range 100-500 degrees C. The TeO2 crystal shows much
more susceptibility to radiation damage at the higher irradiation temperat
ures.