Study of the 1096.9meV photoluminescent oxygen-related centre in neutron-irradiated CZ-Si: Formation and structure

Citation
F. Rodriguez et al., Study of the 1096.9meV photoluminescent oxygen-related centre in neutron-irradiated CZ-Si: Formation and structure, RADIAT EFF, 149(1-4), 1999, pp. 141-148
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
141 - 148
Database
ISI
SICI code
1042-0150(1999)149:1-4<141:SOT1PO>2.0.ZU;2-N
Abstract
The creation process and the structure of an oxygen-associated centre in Si are investigated by means of photoluminescence (PL). The centre is formed after annealing between 250 degrees C; and 450 degrees C in neutron-irradia ted CZ-Si and is photoluminescent with a bound exciton emission at 1096.9 m eV. We show that this PL line as well as the I1 PL line (1018.2 meV) are th e major features of the PL spectra for samples annealed in this temperature range. The comparison of the PL spectra obtained in CZ-Si and FZ-Si crysta ls indicates that the 1096.9 meV PL line is formed at expenses of Il, thus suggesting the associated centre is presumably created by complexing the tr igonal Il centre with one (or more) interstitial oxygen. Uniaxial stress me asurements and the observed oxygen isotopic shift (0.037 meV) show that the PL line is associated with an oxygen centre of monoclinic I symmetry. The thermal activation energy of the binding exciton deduced from the intensity decay, Delta E= 5.1 meV, together with the stress behaviour suggest that t he centre probably corresponds to an iso-electronic centre.