Intrinsic ionic centers in solid Xe

Citation
On. Grigorashchenko et al., Intrinsic ionic centers in solid Xe, RADIAT EFF, 149(1-4), 1999, pp. 197-202
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
197 - 202
Database
ISI
SICI code
1042-0150(1999)149:1-4<197:IICISX>2.0.ZU;2-3
Abstract
Intrinsic ionic centers in solid Xe have been studied using laser-induced f luorescence technique (LIF). Formation of ionic molecular centers has been revealed in the lattice and condition of their stability has been establish ed. To get insight into the electronic structure and the atomic configurati on of ionic centers, a set of experiments has been performed employing Ar a nd Ne matrices doped with Xe at different concentrations. A LIF band at 2.1 -2.2 eV has been observed in the solids under excitation within the range o f the absorption band of the emitting centers. A correlation between the in tensity of the LIF band - nearly identical to the LIF band in pure solid Xe - and the concentration of Xe dimers expected for statistically distribute d impurities in matrices has been found. It suggests that the stable ionic centers in the lattice are formed in a configuration similar to the molecul ar ions Xe-2(+) and the structure of self-trapped and trapped holes resembl es that of the dimer ions. The identification of the transitions observed h as been suggested.