The kinetics of F-aggregate centers formation is investigated in the invert
ed fluoroperovskite of BaLiF3 submitted to electron-irradiation. By studies
of the changes in the absorption spectra during storage of samples in the
dark, at room temperature, it was possible to verify a surprising and inter
esting dependence on defect formation with the crystal growth direction. In
spite of its cubic structure, crystals grown in the [100] and [111] direct
ions and submitted to the same conditions of irradiation, showed in each ca
se different species of F-aggregate centers. It was possible, in particular
, to enhance the production of a defect absorbing at 630 nm in [100] crysta
ls which we believe to correspond to F-2(+)-centers in BaLiF3.