Hole self-trapping and recombination in LiBaF3

Citation
I. Tale et al., Hole self-trapping and recombination in LiBaF3, RADIAT EFF, 149(1-4), 1999, pp. 269-272
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
269 - 272
Database
ISI
SICI code
1042-0150(1999)149:1-4<269:HSARIL>2.0.ZU;2-1
Abstract
We investigated the electron paramagnetic resonance (EPR), recombination af terglow and thermostimulated luminescence (TSL) of the X-irradiated LiBaF3 crystals. After X-irradiation at 80 K, an EPR of the self-trapped hole cent re VK(F-2(-)) oriented along the [110] axis is identified. X-irradiation at temperatures below 200 K results in a creation of a long-term temperature- independent afterglow - tunnelling luminescence (TL), with main emission ba nds at 300, 370 and 430 nm. The short wavelength TL bands are associated wi th the tunnelling recombination of the electron centre with the VK centre, with thermal stability estimated to be about 130 K.