Optical and EPR characterization of point defects in bismuth-doped CdWO4 crystals

Authors
Murphy, HJ Stevens, KT Garces, NY Moldovan, M Giles, NC Halliburton, LE
Citation
Hj. Murphy et al., Optical and EPR characterization of point defects in bismuth-doped CdWO4 crystals, RADIAT EFF, 149(1-4), 1999, pp. 273-278
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
273 - 278
Database
ISI
SICI code
1042-0150(1999)149:1-4<273:OAECOP>2.0.ZU;2-0
Abstract
We suggest that the 550-nm "yellow" emission in CdWO4 is due to Bi3+ ions s ubstituting for Cd2+ ions. The absorption band corresponding to this emissi on has a peak near 350 nm. This yellow emission was only observed in crysta ls that contained bismuth impurities. Electron paramagnetic resonance has i dentified two new centers in X-ray irradiated bismuth-doped CdWO4. One cent er is electron-like and is suggested to be a Bi2+ ion located on a Cd2+ sit e. The other center is assigned to a hole trapped on an oxygen ion adjacent to a Nb5+ ion substituting for a W6+ ion.