Epitaxial films with thickness of 10-250 mu m of yttrium aluminium garnet (
YAG) doped with Cr were grown by liquid phase epitaxy technique on YAG: Nd
substrates. Go-doping with Mg2+ was used to force the Cr4+ valent state for
mation. Dependence of absorption spectra of obtained films on melt-solution
composition, growth conditions and thermal treatment in reducing and oxidi
zing atmospheres is studied. The absorption being characteristic for YAG:Cr
4+ crystals is found in co-doped films grown at higher temperatures (1000-1
100 degrees C). The chromium entering in the tetravalent state is confirmed
by the annealing experiments. A very intensive absorption band in UV regio
n with maximum at 275 nm was found both in co-doped and YAG: Mg2+ epifilms
caused probably by oxygen vacancies compensating the excess charge of Mg2+.
Its intensity correlates with Cr4+ content in the film in the following wa
y: it decreases with Cr4+ entering in the film.