Colour centres investigation in pure and doped yttrium aluminium garnet epitaxial films

Citation
Sb. Ubizskii et al., Colour centres investigation in pure and doped yttrium aluminium garnet epitaxial films, RADIAT EFF, 149(1-4), 1999, pp. 375-379
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
375 - 379
Database
ISI
SICI code
1042-0150(1999)149:1-4<375:CCIIPA>2.0.ZU;2-P
Abstract
Epitaxial films with thickness of 10-250 mu m of yttrium aluminium garnet ( YAG) doped with Cr were grown by liquid phase epitaxy technique on YAG: Nd substrates. Go-doping with Mg2+ was used to force the Cr4+ valent state for mation. Dependence of absorption spectra of obtained films on melt-solution composition, growth conditions and thermal treatment in reducing and oxidi zing atmospheres is studied. The absorption being characteristic for YAG:Cr 4+ crystals is found in co-doped films grown at higher temperatures (1000-1 100 degrees C). The chromium entering in the tetravalent state is confirmed by the annealing experiments. A very intensive absorption band in UV regio n with maximum at 275 nm was found both in co-doped and YAG: Mg2+ epifilms caused probably by oxygen vacancies compensating the excess charge of Mg2+. Its intensity correlates with Cr4+ content in the film in the following wa y: it decreases with Cr4+ entering in the film.