Effect of radiation damage on luminescence of erbium-implanted SiO2/Si studied by slow positron beam

The effect of damage on 1.54 mu m luminescence for 30 keV-Er-implanted SiO2 films has been studied by positron annihilation and cathodoluminescence. I t was found that S-parameter in the films decreased after implantation, ind icating the suppression of positronium formation. The luminescence appeared with the recovery of the S-parameter after 600 degrees C annealing. The in tensity reached a maximum at 900 degrees C annealing whereas the S-paramete r did not change significantly. It seems that most damages recover at 600 d egrees degrees C and thereafter Er ions transform to an optically active st ate at 900 degrees C. (C) 2000 Elsevier Science Ltd. All rights reserved.