CMP processes are being used in an increasing number of applications in the
wafer fab in response to shrinking device geometries with their increased
need for planarity. There is a corresponding growing need for measurement o
f post-CMP parameters over lengths from device size (<1 mu m) to die size (
>10mm). Measurements required for process development and production monito
ring include plug recess, dishing around lines and plugs, erosion in patter
ned areas and planarity across the die. A new instrument, combining capabil
ities of stylus surface profilers and atomic force microscopes, has been de
veloped specifically for this purpose.