Processing for advanced devices with hot-wall furnace RTP

A new single wafer hot-wall isothermal furnace RTP system incorporates many benefits of large batch furnaces while satisfying throughput and thermal b udget constraints motivating an industry migration towards single wafer pro cessing. The system is capable of producing wet and dry oxides, with and wi thout chlorine. A quartz process chamber makes it compatible with chlorine processes. Oxidation or anneal processes in NO or N2O can be performed to p roduce nitrided gate oxides, and numerous CVD applications are possible. Th e hot-wall isothermal process chamber reduces emissivity problems, and a st acked process chamber configuration contributes to efficient fab utilizatio n and sequential processing capability for gate stack and capacitor structu res.