Thermal processing in a single wafer rapid thermal furnace

Authors
Yoo, WS Yamazaki, T Enjoji, K
Citation
Ws. Yoo et al., Thermal processing in a single wafer rapid thermal furnace, SOL ST TECH, 43(7), 2000, pp. 223
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
43
Issue
7
Year of publication
2000
Database
ISI
SICI code
0038-111X(200007)43:7<223:TPIASW>2.0.ZU;2-#
Abstract
The design concept and hardware configuration of a single water, RTF system , plus temperature measurement/control methods and thermal characteristics are described. A production-quality process results in TiSi formation impla nt anneal, and thin oxide formation. Slip-free RTP results were achieved in 200mm Si wafers processed at 1100 degrees C for 60 sec at atmospheric pres sure.