A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to cha racterize the process with respect to various parameters. The model estimat es the maximum bandgap shift and the effect of process parameters such as e xposure time and irradiation energy. The calculation results appear to be i n good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/lnGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 mu m. The model serves as a good simulation program to optimize this process for the fabrication of photoni c integrated circuits. (C) 2000 Published by Elsevier Science S.A. All righ ts reserved.