On the mechanism of charge transfer in n(+)-CdS-p-InP-p(+)-InP heterostructures

Authors
Slobodchikov, SV Salikhov, KM Russu, EV Malinin, YG
Citation
Sv. Slobodchikov et al., On the mechanism of charge transfer in n(+)-CdS-p-InP-p(+)-InP heterostructures, TECH PHYS L, 26(7), 2000, pp. 628-630
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
7
Year of publication
2000
Pages
628 - 630
Database
ISI
SICI code
1063-7850(2000)26:7<628:OTMOCT>2.0.ZU;2-U
Abstract
The mechanisms of charge transfer in n(+)-CdS-p-InP-p(+)-InP heterostructur es were studied in the temperature interval from 100 to 300 K. The forward current is determined either by tunneling via local centers (at low tempera tures) or by recombination in the space-charge region. The reverse current is controlled by tunneling via local centers and by direct interband tunnel ing. Breakdown in these heterojunctions also proceeds by the tunneling mech anism. (C) 2000 MAIK "Nauka/Interperiodica".