S. Ghosh et al., Deposition of thin films of different oxides of copper by RF reactive sputtering and their characterization, VACUUM, 57(4), 2000, pp. 377-385
Thin films of Cu2O and CuO are deposited by RF reactive sputtering at diffe
rent substrate temperatures. Crystalline phases are identified by grazing a
ngle X-ray diffraction (GAXRD). It shows that Cu2O phase is prominent at th
e substrate temperature corresponding to 30 degrees C (no deliberate heatin
g of the substrate) and 150 degrees C. CuO phase is obtained at a substrate
temperature of 300 degrees C. The band gap of the films are found by optic
al absorption method. Surface morphology of the films are characterized by
atomic force microscopy (AFM). Stoichiometric analysis is done by elastic r
ecoil detection analysis (ERDA) technique with high-energy heavy ion beam.
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