Silicon oxide films from the Plasmodul (R)

Citation
M. Walker et al., Silicon oxide films from the Plasmodul (R), VACUUM, 57(4), 2000, pp. 387-397
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
57
Issue
4
Year of publication
2000
Pages
387 - 397
Database
ISI
SICI code
0042-207X(200006)57:4<387:SOFFTP>2.0.ZU;2-L
Abstract
Gas mixtures of hexamethyldisiloxane (HMDSO) and oxygen (O-2) are used for plasma-enhanced chemical vapour deposition of silicon oxide films. These fi lms were deposited in a newly developed plasma reactor, called Plasmodul(R) The plasma is excited by 2.45 GHz microwaves in the pressure range of 0.05 -200 mbar. The Plasmodul is a modular device consisting of a plasma source, a gas inlet system, a reaction and substrate chamber and a diagnostic port . It is a flexible equipment, comfortable in handling and simple in constru ction. The special arrangement allows a film deposition remote from the pla sma source. The chemical composition of the films was investigated in depen dence on the HMDSO:O-2 monomer mixture ratio by Fourier-transform infrared spectroscopy. (C) 2000 Elsevier Science Ltd. All rights reserved.