ESR study of a new electron center in synthetic stishovite, a high-pressure polymorph of silica

Citation
A. Tani et al., ESR study of a new electron center in synthetic stishovite, a high-pressure polymorph of silica, APPL MAGN R, 18(4), 2000, pp. 559-564
Citations number
16
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
APPLIED MAGNETIC RESONANCE
ISSN journal
09379347 → ACNP
Volume
18
Issue
4
Year of publication
2000
Pages
559 - 564
Database
ISI
SICI code
0937-9347(2000)18:4<559:ESOANE>2.0.ZU;2-Z
Abstract
A new unidentified electron center in gamma-ray-irradiated synthetic stisho vite, a high-pressure polymorph of SiO2, was detected by X-band electron sp in resonance. It has an anisotropic g-factor of orthorhombic symmetry, g(1) = 1.9764, g(2) = 1.9527 and g(3) = 1.9370. The signal intensity was satura ted at a microwave power of 2 mW. Annealing experiments show that the cente r was annealed out around 280 K and unstable at room temperature. The cente r may be ascribed to a titanium electron center on the basis of a relativel y large g-shift and a comparison with the paramagnetic centers in quartz.