Visible emission from electroluminescent devices using an amorphous AlN : Er3+ thin-film phosphor

Electroluminescence (EL) studies of AlN:Er alternating-current thin-film el ectroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Er -doped AlN, similar to 200 nm thick, were grown on indium-tin-oxide/aluminu m-titanium-oxide/glass substrates using rf magnetron sputtering in a nitrog en atmosphere. The turn-on voltage was found to be around 70-80 and 100 V f or ACTFEL devices without and with a top insulator layer. Sharp emission li nes in the visible region were observed which correspond to known transitio ns of the Er3+ ion. Temperature-dependent cathodoluminescence studies corro borate the EL results, and show that optimum device performance is attained near 300 K. (C) 2000 American Institute of Physics. [S0003- 6951(00)01630- 2].