Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

Authors
Nistor, L Bender, H Vantomme, A Wu, MF Van Landuyt, J O'Donnell, KP Martin, R Jacobs, K Moerman, I
Citation
L. Nistor et al., Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer, APPL PHYS L, 77(4), 2000, pp. 507-509
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
4
Year of publication
2000
Pages
507 - 509
Database
ISI
SICI code
0003-6951(20000724)77:4<507:DEOSQD>2.0.ZU;2-0
Abstract
We report a direct observation of quantum dots formed spontaneously in a th ick InGaN epilayer by high resolution transmission electron microscopy. Inv estigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in th e range of 1.5-3 nm. Such sizes are in very good agreement with calculation s based on the luminescence spectra of this specimen. (C) 2000 American Ins titute of Physics. [S0003-6951(00)00930-X].