Raman study of ZnxBe1-xSe alloy (100) epitaxial layers

Citation
O. Pages et al., Raman study of ZnxBe1-xSe alloy (100) epitaxial layers, APPL PHYS L, 77(4), 2000, pp. 519-521
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
4
Year of publication
2000
Pages
519 - 521
Database
ISI
SICI code
0003-6951(20000724)77:4<519:RSOZA(>2.0.ZU;2-D
Abstract
Long wavelength longitudinal optical (LO) and transverse optical (TO) phono ns of BeSe and ZnxBe1-xSe layers are identified in a wide composition range by using Raman spectroscopy. A two-mode behavior is clearly evidenced. As predicted by the dielectric model of Hon and Faust, the eigenfrequencies of the BeSe- and ZnSe-like LO modes correspond to the maxima of Im <-epsilon( omega, x)(-1)>. Excellent agreement is obtained with a model where the calc ulations are performed by using the equations of motion and polarization de rived from the modified random element isodisplacement model. Besides, the TO and LO frequencies for BeSe are determined to be 501 and 579 cm(-1), res pectively. (C) 2000 American Institute of Physics. [S0003-6951(00)04030-4].