Single-crystalline silicon lift-off films for metal-oxide-semiconductor devices on arbitrary substrates

Authors
Tilke, A Rotter, M Blick, RH Lorenz, H Kotthaus, JP
Citation
A. Tilke et al., Single-crystalline silicon lift-off films for metal-oxide-semiconductor devices on arbitrary substrates, APPL PHYS L, 77(4), 2000, pp. 558-560
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
4
Year of publication
2000
Pages
558 - 560
Database
ISI
SICI code
0003-6951(20000724)77:4<558:SSLFFM>2.0.ZU;2-R
Abstract
We present a technique to mount single-crystalline silicon thin films on ar bitrary substrates. We demonstrate in detail the preparation of a 190-nm-th in silicon metal-oxide-semiconductor field-effect transistor (MOSFET) on a silicon-on-insulator film lifted from its substrate and bonded to quartz. F unctioning of this hybrid MOSFET on a rigid surface at room temperature is demonstrated. (C) 2000 American Institute of Physics. [S0003-6951(00)02030- 1].