Correlation of mobile and fixed charge creation in protonated field-effecttransistors

Protons have been introduced into the 40 nm gate oxides of n-channel metal- oxide-semiconductor field-effect transistors, resulting in the creation of mobile and fixed positive charge. Transistor gate lengths in the range from 5 to 70 mu m have been studied. Hysteresis in the threshold voltage as lar ge as -18 V has been measured. An inverse linear relationship has been foun d between the quantity of mobile and fixed charge generated. The inversion channel electron mobility is found to lie in the range 310-530 cm(2) V-1 s( -1). (C) 2000 American Institute of Physics. [S0003-6951(00)02529-8].