Cathodoluminescent properties at nanometer resolution through Z-contrast scanning transmission electron microscopy

Citation
Hj. Gao et al., Cathodoluminescent properties at nanometer resolution through Z-contrast scanning transmission electron microscopy, APPL PHYS L, 77(4), 2000, pp. 594-596
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
4
Year of publication
2000
Pages
594 - 596
Database
ISI
SICI code
0003-6951(20000724)77:4<594:CPANRT>2.0.ZU;2-Z
Abstract
We report the observation of porous structures in laser-ablation-deposited Y2O3:Eu thin films and their correlation with luminescent properties by a c ombination of transmission electron microscopy and Z-contrast scanning tran smission electron microscopy (Z-STEM). Depending on growth conditions, a la rge density of voids is incorporated into the films, which leads to a much increased surface area. Cathodoluminescence imaging in the STEM directly re veals a 5 nm "dead layer" around each void, which is responsible for the ob served reduction in luminescence efficiency. (C) 2000 American Institute of Physics. [S0003- 6951(00)05229-3].