Resistance of the anodic PbO film formed in sulfuric acid solution

Authors
Liu, HT Liang, HH Yang, J Zhou, WF
Citation
Ht. Liu et al., Resistance of the anodic PbO film formed in sulfuric acid solution, CHIN J CHEM, 18(4), 2000, pp. 489-494
Citations number
19
Categorie Soggetti
Chemistry
Journal title
CHINESE JOURNAL OF CHEMISTRY
ISSN journal
1001604X → ACNP
Volume
18
Issue
4
Year of publication
2000
Pages
489 - 494
Database
ISI
SICI code
1001-604X(200007/08)18:4<489:ROTAPF>2.0.ZU;2-8
Abstract
The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO 4) in 4.5 mol/dm(3) H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting that the interstitial liquid may serve as the major passage for ion transp ortation during the film growth.