Zirconium tin titanate (ZTT) thin films were successfully grown by chemical
vapor deposition using directly injected solventless liquid mixtures of me
tallorganic precursors bearing common ligands, ZrL4+SnL4+TiL4, where L repr
esents diethylamide 1, dimethylamide 2, and t-butoxide 3, respectively. Rut
herford backscattering analysis of the ZTT films revealed that the film com
positions were affected by the deposition temperatures. The films deposited
at 300 degrees C from precursor 3 showed a low leakage current of 10(-8) A
/cm(2) at 1 V, which was further improved after thermal anneal under N-2 at
400 degrees C for 30 min. (C) 2000 The Electrochemical Society. S1099-0062
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