CVD of Zr-Sn-Ti-O thin films by direct injection of solventless liquid precursor mixtures

Zirconium tin titanate (ZTT) thin films were successfully grown by chemical vapor deposition using directly injected solventless liquid mixtures of me tallorganic precursors bearing common ligands, ZrL4+SnL4+TiL4, where L repr esents diethylamide 1, dimethylamide 2, and t-butoxide 3, respectively. Rut herford backscattering analysis of the ZTT films revealed that the film com positions were affected by the deposition temperatures. The films deposited at 300 degrees C from precursor 3 showed a low leakage current of 10(-8) A /cm(2) at 1 V, which was further improved after thermal anneal under N-2 at 400 degrees C for 30 min. (C) 2000 The Electrochemical Society. S1099-0062 (00)04-052-9. All rights reserved.