GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth

Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hyd ride vapor-phase epitaxy around Al-containing wet etched laser mesas is use d for the first time to fabricate a GaAs/AlGaAs buried heterostructure lase r emitting at 808 nm. The reverse and forward current-voltage characteristi cs measured at different temperatures up to 80 degrees C indicate no seriou s leakage current problems. The performance of the laser shows that the SI- GaInP: Fe burying layer fulfills its function as a current and optical conf inement layer. The fabrication procedure and the laser characteristics are presented. (C) 2000 The Electrochemical Society. S1099-0062(00)04-077-3. Al l rights reserved.